On the Origin of Surface Trapping Effects in AlGaN/GaN HEMTs
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چکیده
GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for the next generation of high-power and high-frequency electronics. However, trapping effects have been one of the most important barriers in the development of the GaN semiconductor since its infancy. In recent years, significant research efforts have been focused on understanding and suppressing trapping effects in AlGaN/GaN HEMTs . Many of these effects have been linked to surface traps, and they have been mitigated by using passivation layers, such as silicon nitride . The physical origin of these surface traps is, however, not clear yet. In this work, we propose that surface trapping effects in AlGaN/GaN HEMTs are mainly caused by water-related electron traps on the device’s surface.
منابع مشابه
On the Origin of Surface Trapping Effects in AlGaN/GaN HEMTs
GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for the next generation of high-power and high-frequency electronics. However, trapping effects have been one of the most important barriers in the development of the GaN semiconductor since its infancy. In recent years, significant research efforts have been focused on understanding and suppressing trapping effe...
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GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for the next generation of high-power and high-frequency electronics. However, trapping effects have been one of the most important barriers in the development of the GaN semiconductor since its infancy. In recent years, significant research efforts have been focused on understanding and suppressing trapping effe...
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